Abstract-Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

D. A. Bandurin,  I. Gayduchenko, Y. Cao,  M. Moskotin, A. Principi,  I. V. Grigorieva, G. Goltsman, G. Fedorov, D. Svintsov,

https://aip.scitation.org/doi/abs/10.1063/1.5018151

Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.