Abstract-Coherent detection of THz-induced sideband emission from excitons in the nonperturbative regime

K. Uchida, T. Otobe, T. Mochizuki, C. Kim, M. Yoshita, K. Tanaka, H. Akiyama, L. N. Pfeiffer, K. W. West, and H. Hirori

https://journals.aps.org/prb/accepted/43076O14Z2210330d36f6038100d0aa224fae6d98

Strong interaction of terahertz (THz) waves with excitons induces nonperturtbative optical effects such as Rabi splitting and high-order sideband generation. Here, we investigated coherent properties of THz-induced sideband emissions from GaAs/AlGaAs multi-quantum-wells, and determined the optical susceptibility of the THz dressed exciton in the nonperturbative regime. The strong dependences of both amplitude and phase of the second-order sideband emission on the THz electric field strength imply that the field ionization of the 1s exciton modifies the THz-dressed exciton's energy spectrum.