Abstract-Giant self-induced transparency of intense few-cycle terahertz pulses in n-doped silicon

O.V. Chefonov, A.V. Ovchinnikov, S.A. Romashevskiy, X. Chai, T. Ozaki, A.B. Savel'ev, M.B. Agranat, V.E. Fortov

(Submitted on 10 Oct 2017)

https://arxiv.org/abs/1710.03583

The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of 8.7×1016 cm−3) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm−1 and a pulse duration of 700 fs. Huge transmittance enhancement of ∼90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5--3.1 MV cm−1.