Abstract-Integrating THz Sensors/Structures Through Electrowetting in Dielectrics (EWOD) for Security Applications

L. Sirbu, L. Mihai, M. Danila, V. Schiopu, A. Matei, F. Comanescu, A. Baracu, A. Stefan, T. Dascalu, R. Muller

https://link.springer.com/chapter/10.1007/978-94-024-1093-8_12


We developed a combination of technology for deposition contacts/wires upon nanoporous InP thin film structures and RF sputtering InP films. Indium phosphide (InP) films were deposited onto glass substrate using RF magnetron sputtering by varying the substrate temperature (50–100 °C), under constant argon pressure (6.3·10−3Bar) and RF power (100 W). To have good optimisation of growing parameters of LT-InP films we use several characterization techniques, Raman, FTIR, XRD, and THz spectroscopy, respectively. Doping with Ga ions was used to induce disordered in InP film, to reduce the optical recombination in IR spectra.