Khwanchai Tantiwanichapan, Xuanye Wang, Habibe Durmaz, Yuyu Li,
Anna K Swan and Roberto Paiella
http://pubs.acs.org/doi/abs/10.1021/acsphotonics.7b00384?journalCode=apchd5
Pronounced plasmonic absorption features are measured, whose frequencies can be tuned across a large portion of the THz spectrum by varying the array period. At the same time, the ability to tune these resonances actively via electrostatic doping is found to be strongly limited by the presence of large carrier density variations across the sample area induced by the underlying SiO2, which are measured directly by Raman microscopy. These results highlight the importance of minimizing charge puddles in graphene plasmonic devices, e.g., through the use of more inert substrates, in order to take full advantage of their expected dynamic tunability for applications in THz optoelectronics.
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