Abstract-GaN Terahertz Photodetectors for the Reststrahlen Gap of Intersubband Optoelectronics

Habibe Durmaz, Denis Nothern, Gordie Brummer, Theodore D. Moustakas, and Roberto Paiella

https://www.osapublishing.org/abstract.cfm?uri=CLEO_SI-2017-SM4J.7

Terahertz intersubband photodetectors are developed based on GaN/AlGaN quantum wells grown on a semi-polar GaN substrate, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption.

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