US Patent-Impedance adaptation in a THz detector

United States Patent 9614116
Inventors:

Le Bars, Philippe (Thorigne Fouillard, FR) 
Sahyoun, Walaa (Rennes, FR) 
Knap, Wojciech (Saint-Gely-du-Fesc, FR) 
Diakonova, Nina (Montpellier, FR) 
Coquillat, Dominique (Prades-le-Lez, FR) 

http://www.freepatentsonline.com/9614116.html

At least one electronic device, system and method of manufacturing an electromagnetic wave detector are provided herein. The electronic device for receiving at least one electromagnetic wave of a given frequency may comprise at least one first field effect transistor, and at least one antenna configured to receive the at least one electromagnetic wave and connected to a gate of the at least one first field effect transistor, wherein a length of the gate is in a same order of magnitude as an oscillation length of an oscillation regime of the at least one first field effect transistor at the given frequency, and a width of the gate is such that an impedance presented by the at least one first field effect transistor in the oscillation regime is adapted to an impedance of the at least one antenna.