US Patent-Multi-step deep reactive ion etching fabrication process for silicon-based terahertz components

United States Patent 9461352

Inventors: Jung-kubiak, Cecile (Pasadena, CA, US) 
Reck, Theodore (Pasadena, CA, US) 
Chattopadhyay, Goutam (Pasadena, CA, US) 
Perez, Jose Vicente Siles (Pasadena, CA, US) 
Lin, Robert H. (Chino, CA, US) 
Mehdi, Imran (South Pasadena, CA, US) 
Lee, Choonsup (La Palma, CA, US) 
Cooper, Ken B. (Glendale, CA, US) 
Peralta, Alejandro (Huntington Beach, CA, US)

 

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A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.