Abstract-Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection

http://onlinelibrary.wiley.com/doi/10.1002/adma.201503350/full

Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor using a wrapped metal–semiconductor–metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.