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Pages- Terahertz Imaging & Detection
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Tuesday, September 29, 2015
Abstract-Terahertz detection by epitaxial-graphene field-effect-transistors on silicon carbide
We report on room temperature detection of terahertz radiation by means of antenna-coupledfield effect transistors(FETs) fabricated using epitaxialgraphenegrown on siliconcarbide. The achieved photoresponsivity (∼0.25 V/W) and noise equivalent power (∼80 nW/Hz−−−√) result from the combined effect of two independent detection mechanisms: over-damped plasma wave rectification and thermoelectric effects, the latter ascribed to the presence of carrier density junctions along the FET channel. The calculated plasmonic and thermoelectric response reproduces qualitatively well the measured photovoltages; the experimentally observed sign-switch demonstrates the stronger contribution of plasmonic detection compared to the thermoelectric one. These results unveil the potential of plasmonic detectors exploitingepitaxialgraphene on siliconcarbide for fast large area imaging of macroscopic samples.
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