Abstract-High intrinsic mobility and ultrafast carrier dynamics in multilayer metal-dichalcogenide MoS2

Jared H. Strait, Parinita Nene, and Farhan Rana

https://journals.aps.org/prb/accepted/2e07dO93Jc91692ff2019f21feb79d6d9cfee0aea


The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by optical-pump terahertz-probe spectroscopy. We find mobilities in this material approaching 4200 cm2V-1s-1 at low temperatures. The temperature dependence of scattering indicates that the mobility, an order of magnitude larger than previously reported for MoS2, is intrinsically limited by acoustic phonon scattering at THz frequencies. Our measurements of carrier relaxation reveal picosecond cooling times followed by recombination lasting tens of nanoseconds and dominated by Auger scattering into defects. Our results provide a useful context in which to understand and evaluate the performance of MoS2-based electronic and optoelectronic devices.