D Svintsov1,2,3, V G Leiman1, V Ryzhii3,4,5, T Otsuji3 and M S Shur6
1 Moscow Institute of Physics and Technology (State University), Dolgoprudny 141700, Russia
2 Institute of Physics and Technology, Russian Academy of Sciences, Moscow 117218, Russia
3 Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
4 Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 105005, Russia
5 Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow 111005, Russia
6 Center for Integrated Electronics and Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
2 Institute of Physics and Technology, Russian Academy of Sciences, Moscow 117218, Russia
3 Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
4 Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 105005, Russia
5 Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow 111005, Russia
6 Center for Integrated Electronics and Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
D Svintsov et al 2014 J. Phys. D: Appl. Phys. 47 505105. doi:10.1088/0022-3727/47/50/505105
Received 11 June 2014, accepted for publication 28 October 2014. Published 25 November 2014.
© 2014 IOP Publishing Ltd
Received 11 June 2014, accepted for publication 28 October 2014. Published 25 November 2014.
© 2014 IOP Publishing Ltd
Abstract
We propose and analyze a detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with a mechanically floating gate also made of graphene. The THz component of incoming radiation induces resonant excitation of plasma oscillations in the graphene layers (GLs). The rectified component of the ponderomotive force between the GLs invokes resonant mechanical swinging of the top GL, resulting in drain current oscillations. To estimate the device responsivity, we solve the hydrodynamic equations for the electrons and holes in graphene which govern the plasma-wave response, and the equation describing the graphene membrane oscillations. The combined plasma-mechanical resonance raises the current amplitude by up to four orders of magnitude. The use of graphene for the elastic gate and conductive channel allows the voltage of both resonant frequencies to be tuned within a wide range.
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