Scanning tunnelling microscopy (STM) image of graphene on Ir(111). The image size is 15 nm × 15 nm. Credit: ESRF
A potential application in security screening: new theoretical model for estimation of electric current rectification in graphene
Electronic transport in graphene contributes to its characteristics. Now, a Russian scientist proposes a new theoretical approach to describe graphene with defects-in the form of artificial triangular holes-resulting in the rectification of the electric current within the material. Specifically, the study provides an analytical and numerical theory of the so-called ratchet effect. Its result is a direct current under the action of an oscillating electric field, due to the skew scattering of electronic carriers by coherently oriented defects in the material. These findings by Sergei Koniakhin from the Ioffe Physical Technical Institute and the Academic University Nanotechnology Research and Education Centre, both affiliated with the Russian Academy of Sciences in St. Petersburg, are published in European Physical Journal B.
Read more at: http://phys.org/news/2014-09-advantage-graphene-defects.html#jCp