Abstract-Selective thermal terahertz emission from GaAs and AlGaAs

K. Požela^1,a), E. Širmulis¹, I. Kašalynas¹, A. Šilėnas¹, J. Požela¹ and V. Jucienė¹
http://scitation.aip.org/content/aip/journal/apl/105/9/10.1063/1.4894539
1 Semiconductor Physics Institute, Center for Physical Sciences and Technology, Vilnius 01108, Lithuania
a) Electronic mail: kpozela@pfi.lt
Appl. Phys. Lett. 105, 091601 (2014); http://dx.doi.org/10.1063/1.48945

The selective thermally stimulated terahertz (THz) radiation emission from GaAs and AlGaAs alloys are experimentally observed at frequencies of coupled oscillations of free electron plasma and different branches of interface AlGaAs optical phonons. The effect of strong absorption of incident radiation with large oblique angle (26°) by heated GaAs and AlGaAs is revealed. The coherent THz radiation emission with the frequency of 7.6 THz from the heated high conductivity GaAs (n = 4 × 10¹⁸cm⁻³) layer is observed. The results are highly relevant to application in optoelectronic THz devices