Abstract-Terahertz emission from silicon nanostructures heavily doped with boron

Nikolay T Bagraev1, Eduard Yu Danilovskii1, Dmitrii S Gets1, Andrey K Kaveev2, Leonid E Klyachkin1, Grigorii I Kropotov2, Andrey A Kudryavtsev1, Roman V Kuzmin1, Anna M Malyarenko1, Vladimir A Mashkov1, Ivan A Tsibizov2, Dmitrii I Tsypishka2 and Ilya A Vinerov2

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1 Ioffe Physical Technical Institute, St. Petersburg, Russia
2 TYDEX, J.S.Co., Domostroitelnaya str. 16, 194292 St. Petersburg, Russia 

http://iopscience.iop.org/1742-6596/486/1/012017;jsessionid=09B513ADA15A741B2BCC1D9D434A24C5.c1

We present the first findings of the terahertz emission from the ultra-narrow p-type silicon quantum well confined by the δ-barriers heavily doped with boron on the n-type Si (100) surface. The THz spectra revealed by the voltage applied along the Si-QW plane appear to result from the radiation of the dipole boron centers.