Abstract-Terahertz detector with series connection of asymmetric gated transistors

D M Yermolaev1, K M Marem'yanin2, N A Maleev4, V E Zemlyakov1, V I Gavrilenko2, V V Popov3 and S Yu Shapoval1

yermolayev.denis@gmail.com

1 Institute of Microelectronic Technology and High-Purity Materials, Russia
2 Institute for Physics of Microstructures, Russia
3 Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), Russia
4 Ioffe Physical Technical Institute, Russia 

http://iopscience.iop.org/1742-6596/486/1/012016;jsessionid=590E7E5B537BB812B7FF197D7794D0D8.c2

Terahertz (THz) detection by a one-dimensional array of series connected field-effect transistors (FETs) is studied experimentally. Such terahertz detector demonstrates greatly enhanced voltaic responsivity up to 2 kV/W. Asymmetrical position of the gate contact in each FET in the array enables strong photovoltaic response.