http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1693462
X. C. Tu, Q. K. Mao, L. Xu, C. Wan, Z. L. Sun, L. Kang, J. Chen, P. H. Wu
Nanjing Univ. (China)
Proc. SPIE 8716, Terahertz Physics, Devices, and Systems VII: Advanced Applications in Industry and Defense, 871605 (May 31, 2013); doi:10.1117/12.2014414
From Conference Volume 8716
- Terahertz Physics, Devices, and Systems VII: Advanced Applications in Industry and Defense
- Mehdi F. Anwar; Thomas W. Crowe; Tariq Manzur
- Baltimore, Maryland, USA | April 29, 2013
In recent years our team has done a lot of work toward the goal of sensitive, inexpensive detectors for terahertz detection. In this paper we describe simple fabrication steps and the characterizations of uncooled Nb5N6 microbolometers for terahertz imaging. The best dc responsivity of the Nb5N6 microbolometer is –760 V/W at the bias current of 0.19 mA. A typical noise voltage as low as 10 nV/Hz1/2 yields a low noise equivalent power (NEP) of 1.3×10-11 W/Hz1/2 at a modulation frequency above 4 kHz. We constructed a quasi-optical type receiver by attaching this uncooled Nb5N6 microbolometer to the hyperhemispherical silicon lens. Subsequently, the imaging experiment is performed using this Nb5N6 microbolometer receiver at a THz imaging system. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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