Advantest Develops THz TOF Tomography Analysis System

http://thznetwork.net/index.php/archives/1621

THz Technology Expanded to Li-ion Battery Electrode Analysis & Other Applications

Advantest Corporation today announced that it has developed a Terahertz (THz) time-of-flight (TOF) tomography analysis system utilizing short-pulse wide-band THz waves. The new system performs imaging and analysis of multi-layer coatings as thin as 10 µm, enabling the analysis of electrode films in li-ion batteries and layers within multi-coat automotive paint, among diverse new applications.

System Features

Advantest’s new system features a Cherenkov THz radiation source (*1) that employs non-linear crystals (LiNbO3;LN) (*2). The Cherenkov phase-matching method, utilizing a proprietary silicon lens developed by Advantest, enables the generation of short wave THz pulses and pseudo mono-pulses-ideal for reflective signal analysis-that cannot be generated with photoconductive elements. This feature facilitates contact-free imaging analysis down to an industry-leading 10 µm thickness.

Wider Applications for Advantest’s THz Wave Technology

Advantest launched sales of its first THz technology 3D imaging system in April 2010, and has since expanded this product family with innovative non-destructive, contact-free analysis solutions for ceramic products and pharmaceuticals. The company’s newly developed system applies its THz technology to the analysis of electrode films in li-ion batteries, multi-coat automotive paint, and other applications that are outside the scope of traditional ultrasonic and infrared analysis systems. Meanwhile, Advantest is continuing to develop its analysis technology to provide optimal solutions for the analysis of samples with greater functionality and more complex internal structures.

The new system will be exhibited at JASIS2012 (Japan Analytical & Scientific Instruments Show, formerly “JAIMA EXPO / SIS”), at the Makuhari Messe International Convention Complex near Tokyo, on September 5-7th, 2012.

(*1): Source where THz waves gain strength in a certain directional angle (Cherenkov radiation angle) and are irradiated. This occurs if the non-linear crystal refraction index for energized light waves is lower than the index for THz waves.
(*2): Optical elements that change electromagnetic waves from light wave frequency to THz frequency using non-linear optical effects.

Thin Film (Silicon on Insulator, SOI) Analysis Example

? Echo-pulse from thin film interface

Measurement Capabilities
Wave frequency band: 7THz (S/N = 1)
Measureable film thickness: 10 µm or greater (for SOI thin films)

Source: Advantest.