Sang Hyo Ahn, Min Woo Ryu, Esan Jang, Hyeong Ju Jeon, Kyung Rok Kim
http://ieeexplore.ieee.org/document/8085323/
We propose advanced non-quasi-static (NQS) compact model of field-effect transistor (FET) for the characterization of a non-resonant plasma-mode terahertz (THz) detector in THz frequency regime by verifying the gate resistance effects on the transient delay and non-resonant plasmonic mechanism with characteristic length, which is a propagation distance of 2-dimensional electron gas (l2DEG), in the channel. Under the super-imposed small-signal ac voltage with 0.2 THz frequency in HSPICE simulation, the plasmonic THz power detection simulation capability of the proposed NQS model has been verified by demonstrating the well-matched results of dc output voltage (Δu) with calibrated TCAD and experimentally measured data. These results can provide the reliable circuit simulation platform for real-time multi-pixel THz imaging operation
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