Wednesday, October 21, 2015

Abstract-Integrated Terahertz Graphene Modulator with 100% Modulation Depth


OPTIMUS, School of Electrical and Electronic Engineering, and CDPT, School of Physical and Mathematical Sciences, The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
§ School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, U.K.
 Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075, Singapore
 Department of Applied Physics, Hong Kong Polytechnic University, Kowloon, Hong Kong
ACS Photonics, Article ASAP
DOI: 10.1021/acsphotonics.5b00317
Publication Date (Web): October 19, 2015
Copyright © 2015 American Chemical Society
*E-mail: qjwang@ntu.edu.sg.

Abstract Image
Terahertz (THz) frequency technology has many potential applications in nondestructive imaging, spectroscopic sensing, and high-bit-rate free-space communications, with an optical modulator being a key component. However, it has proved challenging to achieve high-speed modulation with a high modulation depth across a broad bandwidth of THz frequencies. Here, we demonstrate that a monolithically integrated graphene modulator can efficiently modulate the light intensity of the THz radiation from a THz quantum cascade laser with a 100% modulation depth for certain region of the pumping current, as a result of the strongly enhanced interaction between the laser field and the graphene enabled by this integration scheme. Moreover, the small area of the resulting device in comparison to existing THz modulators enables a faster modulation speed, greater than 100 MHz, which can be further improved through optimized designs of the laser cavity and modulator architectures. Furthermore, as the graphene absorption spectrum is broadband in nature, our integration scheme can be readily scaled to other wavelength regions, such as the mid-infrared, and applied to a broad range of other optoelectronic devices.

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