Abstract-First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

X. Mei,  W. Yoshida, M. Lange, J. Lee, J. Zhou, P. Liu, K. Leong, A. Zamora, J.  Padilla, S. Sarkozy, R. Lai, W.R Deal,

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7047678

We report the first ever terahertz monolithic integrated circuit amplifier based on 25-nm InP high electron mobility transistor (HEMT) process demonstrating amplification at 1 THz (1000 GHz) with 9-dB measured gain at 1 THz. This milestone was achieved with a 25-nm InP HEMT transistor, which exhibits 3.5-dB maximum available gain at 1 and 1.5 THz projected $f_{mathrm {mathbf {MAX}}}$ .